IGBT (Insulated Gate Bipolar Transistor) is called Insulated Gate Bipolar Transistor in Chinese. It is an important semiconductor device in the field of power electronics technology, which combines the high input impedance of MOSFET and the high conductivity of bipolar transistor (BJT).

Externally, the pins of IGBT are collector, emitter and gate respectively. Both the collector and emitter determine the on-off state of the device, and the working state of the corresponding MOSFET tube is determined by the source, drain and gate; This gate is responsible for controlling the switch of IGBT.

Application scope of IGBT: It is suitable for the power supply system of high-power and high-voltage equipment such as electronic equipment, inverters, trams and power conversion systems. It should be noted that IGBT is generally not used in low voltage (below 200V) applications, because its switching loss and conduction loss are greater than that of power MOSFET. In addition, when the switching frequency is particularly high (for example, higher than 30kHz), due to the parasitic parameters introduced by IGBT package and the influence of its internal stored charge, the switching loss is large and the efficiency is low, so IGBT is often not used.