Chapter 1 Semiconductor Devices

1. 1 semiconductor basics 1

Semiconductor devices Generally, these semiconductor materials are silicon, germanium or gallium arsenide, which can be used as rectifiers, oscillators, light emitters, amplifiers, photodetectors and other devices. In order to distinguish it from integrated circuits, it is sometimes called discrete devices.

The basic structure of most double-ended devices (i.e. crystal diodes) is PN junction. Using different semiconductor materials, different processes and geometric structures, a variety of crystal diodes with different functions have been developed, which can be used to generate, control, receive, transform, amplify signals and convert energy. The frequency coverage of crystal diode can range from low frequency, high frequency, microwave, millimeter wave, infrared to light wave. Three-terminal devices are generally active devices, and typical representatives are various transistors (also called transistors). Transistors can be divided into bipolar transistors and field effect transistors. According to different uses, transistors can be divided into power transistors, microwave transistors and low noise transistors. Besides general transistors used for amplification, oscillation and switching, there are also some special transistors, such as phototransistors, magnetic sensitive transistor, field effect sensors, etc. These devices can not only convert the information of some environmental factors into electrical signals, but also have the amplification effect of general transistors to obtain larger output signals. In addition, there are some special devices, such as single junction transistor can be used to generate sawtooth wave, silicon controlled rectifier can be used in various high current control circuits, and charge coupled device can be used as glue injection device or information storage device. In military equipment such as communication and radar, weak signals are mainly received by semiconductor receiving devices with high sensitivity and low noise. With the rapid development of microwave communication technology, microwave semiconductor low-noise devices have developed rapidly, the working frequency has been continuously improved, and the noise figure has been continuously reduced. Microwave semiconductor devices have been widely used in air defense and missile defense, electronic warfare, C(U3)I and other systems because of their excellent performance, small size, light weight and low power consumption.

1. 1. 1 essential semiconductor 1

intrinsic semiconductor

Pure semiconductors without impurities and lattice defects are called intrinsic semiconductors. Actual semiconductors can't be absolutely pure. Intrinsic semiconductors are generally pure semiconductors, and their electricity is mainly determined by the intrinsic excitation of materials. More generally, completely pure semiconductors are called intrinsic semiconductors or I-type semiconductors. Silicon and germanium are both tetravalent elements, and the outermost layer of their nuclei has four valence electrons. They are all "single crystals" composed of the same atom and belong to intrinsic semiconductors.

At the temperature of absolute zero, the valence band of semiconductor is full (see energy band theory). Some electrons in the valence band will cross the forbidden band/band gap and enter the empty band with higher energy after being photoelectrically injected or excited by heat. When there are electrons in the empty band, it will become a conduction band. When an electron is missing from the valence band, a positively charged vacancy will be formed, which is called a hole. The electrons and holes generated above can move freely and become free carriers, and under the action of external electric field, they produce directional motion and form macroscopic current, which are called electron conduction and hole conduction respectively. This mixed conduction due to the generation of electron-hole pairs is called intrinsic conduction. Electrons in the conduction band will fall into holes, making electron-hole pairs disappear, which is called recombination. The energy generated in the recombination process is released in the form of electromagnetic radiation (photon emission) or lattice thermal vibration (phonon emission). At a certain temperature, the generation and recombination of electron-hole pairs coexist and reach a dynamic equilibrium. At this time, the intrinsic semiconductor has a certain carrier concentration, so it has a certain conductivity. Heating or lighting will excite the semiconductor by heat or light, thus producing more electron-hole pairs. At this time, the carrier concentration increases and the conductivity increases. Semiconductor devices such as semiconductor thermistors and photoresistors are manufactured according to this principle. At room temperature, the conductivity of intrinsic semiconductor is small, and the carrier concentration is sensitive to temperature change, so it is difficult to control the characteristics of semiconductor, so it is not widely used in practice.

Intrinsic semiconductor characteristics: electron concentration = hole concentration

Disadvantages: less carriers, poor conductivity and poor temperature stability!

1. 1.2 intrinsic excitation and two carriers 2

1. 1.3 impurity semiconductor 2

definition

Doping some trace elements as impurities in intrinsic semiconductors can significantly change the conductivity of semiconductors. The doped impurities are mainly trivalent or pentavalent elements. Intrinsic semiconductors doped with impurities are called impurity semiconductors. Generally, impurity semiconductors are doped in intrinsic semiconductors in the order of one millionth.

fundamental principle

Impurities in semiconductors have a great influence on conductivity. Intrinsic semiconductors are doped to form impurity semiconductors, which can be generally divided into n-type semiconductors and p-type semiconductors.

When a small amount of impurities are doped into the semiconductor, the periodic potential field near the impurity atoms is disturbed, forming additional bound States, resulting in additional impurity energy levels in the forbidden band. Impurities that can provide electron carriers are called donor impurities, and the corresponding energy levels are called donor energy levels, which are located above the forbidden band and near the bottom of the conduction band. For example, when tetravalent germanium or silicon crystals are doped with pentavalent phosphorus, arsenic, antimony and other impurity atoms, as a molecule of the lattice, four of the pentavalent electrons of the impurity atoms form valence bonds with the surrounding germanium (or silicon) atoms, and the surplus electrons are bound near the impurity atoms, resulting in a hydrogen-like shallow level-donor level. The energy required for an electron at the donor level to jump to the conduction band is much less than that required for excitation from the valence band to the conduction band, and it is easy to be excited to the conduction band to become an electron carrier. Therefore, for the semiconductor doped with donor impurities, the conductive carriers are mainly electrons excited to the conduction band, which belongs to the electron conduction type and is called N-type semiconductor. Because there are always intrinsic excited electron-hole pairs in semiconductors, in N-type semiconductors, electrons are majority carriers and holes are minority carriers.

Accordingly, the impurity that can provide hole carriers is called acceptor impurity, and the corresponding energy level is called acceptor energy level, which is located below the forbidden band and near the top of the valence band. For example, when doping trace trivalent elements such as boron, aluminum and gallium into germanium or silicon crystals, the impurity atoms lack an electron when forming valence bonds with the surrounding four germanium (or silicon) atoms, so there is a vacancy, and the energy state corresponding to this vacancy is the acceptor level. Because the acceptor level is close to the top of the valence band, electrons in the valence band can be easily excited to the acceptor level to fill this vacancy, making the acceptor impurity atoms become negative centers. At the same time, due to the ionization of electrons, vacancies are left in the valence band, forming free hole carriers. The ionization energy required for this process is much smaller than that for intrinsic semiconductors. So at this time, holes are the majority carriers, and impurity semiconductors mainly rely on holes to conduct electricity, that is, hole conduction type, which is called P-type semiconductor. In p-type semiconductors, holes are the majority carriers and electrons are the minority carriers. Minority carriers usually play an important role in various effects of semiconductor devices.

1. 1.4 PN junction 4

PN junction Using different doping processes, P-type semiconductor and N-type semiconductor are fabricated on the same semiconductor (usually silicon or germanium) substrate by diffusion, and a space charge region called PN junction is formed at their interface. The PN junction has unilateral conductivity. P is the abbreviation of positive charge, and n is the abbreviation of negative charge, indicating the characteristics of positive charge and carrier. When one part of the single crystal semiconductor doped with acceptor impurities is a P-type semiconductor and the other part doped with donor impurities is an N-type semiconductor, the transition region near the interface between the P-type semiconductor and the N-type semiconductor is called a PN junction. There are two kinds of PN junction: homogeneous junction and heterojunction. A PN junction made of the same semiconductor material is called a homogeneous junction, and a PN junction made of two semiconductor materials with different band gaps is called a heterojunction.

1.2 diode 7

Diode, also known as crystal diode, is short for diode. In addition, there are early vacuum electronic diodes. It is an electronic device that conducts current in one direction. There is a PN junction and two lead terminals in the semiconductor diode. This electronic device has unidirectional current conductance according to the direction of applied voltage. Generally speaking, crystal diode is a pn junction interface formed by sintering P-type semiconductor and N-type semiconductor. A space charge layer is formed on both sides of the interface to form a self-built electric field. When the applied voltage is equal to zero, the diffusion current is equal to the drift current caused by the self-built electric field caused by the carrier concentration difference between the two sides of the pn junction, which is also a normal diode characteristic.

1.2. 1 Several Common Structures of Diodes 7

Voltammetric characteristics of 1.2.2 diode 7

1.2.3 main parameters of diode 8

A simple method to judge the polarity of 1.2.4 diode 8

Equivalent circuit of 1.2.5 diode 9

* 1.3 basic application circuit of diode 9

1.3. 1 diode rectifier circuit 9

1.3.2 bridge rectifier circuit 10

1.3.3 voltage doubler rectifier circuit 1 1

1.3.4 limit circuit 12

1.3.5 AND gate 12

* 1.4 voltage regulator 13

Zener diode (also called Zener diode) is a semiconductor device, and its resistance is always high until it reaches the critical reverse breakdown voltage.

Structure and characteristic curve of 1.4. 1 voltage stabilizer 13

1.4.2 Main parameters of voltage regulator 14

1.5 Other types of diodes 15

1.5. 1 LED 15

Photodiode 16

1.6 triode 16

Semiconductor triode is also called "transistor" or "transistor" Two PN junctions which interact with each other are prepared on a semiconductor germanium or silicon single crystal to form a PNP (or NPN) structure. The middle N region (or P region) is called base region, and the regions on both sides are called emitter region and collector region. Each of these three parts has an electrode lead, which is called base B, emitter E and collector C respectively. They are semiconductor electronic devices that can be amplified, oscillated or switched.

1.6. 1 triode 16 structure and type

Current amplification of 1.6.2 triode 17

Emission characteristic curve of 1.6.3 * * triode 19

1.6.4 main parameters of triode 2 1

1.7 field effect transistor 23

Field effect transistor (FET) is short for field effect transistor. Majority carrier conduction is also called unipolar transistor. Belonging to a voltage-controlled semiconductor device. It has the advantages of high input resistance (108 ~109 Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown, wide safe working area and so on, and has become a strong competitor of bipolar transistors and power transistors.

1.7. 1 Types and structures of junction field effect transistors 23

1.7.2 Types and structures of insulated gate field effect transistors 26

1.7.3 main parameters of fet 30

Abstract of this chapter 3 1

Exercise 3 1

Chapter II Basic Amplification Circuit 34

2. 1 *** emitter amplifier circuit 34

2. 1. 1 Composition of Circuit 34

2. 1.2 DC path and AC path of amplifier circuit 35

2. 1.3 *** Graphical Analysis of Emitter Circuit 35

2. 1.4 Micro-variable equivalent circuit analysis method 39

2.2 Analysis of Amplification Circuit 44

2.2. 1 The necessity of stabilizing the working point 44

2.2.2 Typical Circuit with Stable Operating Point 44

2.2.3 Composite Tube Amplifier Circuit 47

2.3 *** collector voltage amplifier 48

2.4 *** base voltage amplifier 50

2.5 multistage amplifier 5 1

2.5. 1 resistance-capacitance coupled voltage amplifier 52

* 2.5.2 * * emitter-* * base amplifier 53

2.5.3 Direct coupling voltage amplifier 55

2.6 differential amplifier 57

2.6. 1 circuit composition 57

Static analysis 59

Dynamic analysis 59

2.6.4 Four input and output configurations of differential amplifier 6 1

2.7 Frequency response characteristics of amplifier 64

2.7. High frequency equivalent model of1triode 64

2.7.2 Frequency response of transistor current amplification factor 66

2.7.3 Frequency response characteristics of single-tube * * * transmitting amplifier circuit 68

2.8 FET basic amplifier circuit 74

2.8. 1 circuit composition 74

2.8.2 Comparison between FET and Triode 77

2.9 Power Amplification Circuit 77

2.9. 1 overview 77

2.9.2 Class A power amplifier circuit 78

2.9.3 Analog Pull Power Amplifier Circuit 79

Abstract of this chapter 8 1

Exercise 82

Chapter 3 Integrated Operational Amplifier 89

3. 1 overview 89

Integrated operational amplifier, referred to as integrated operational amplifier, is a high-gain analog integrated circuit composed of multi-stage direct coupling amplifier circuits. It has the characteristics of high gain (up to 60~ 180dB), high input resistance (tens of kiloohms to millions of megaohms), low output resistance (tens of ohms), high * * mode rejection ratio (60~ 170dB), small offset and drift, and it also has the characteristics of zero output voltage when the input voltage is zero, so it is suitable for positive and negative voltages.

Analog integrated circuits are generally made of a P-type silicon wafer with a thickness of about 0.2~0.25mm, which is the substrate of integrated circuits. A circuit containing dozens or more BJT or FET, resistors and connecting wires can be made on the substrate.

The operational amplifier has+and-input and output terminals, as well as+and-power supply terminal, external compensation circuit terminal, zero adjustment terminal, phase compensation terminal, common * * * ground terminal and other additional terminals. Its closed-loop amplification depends on external feedback resistance, which brings great convenience to use.

3. 1. 1 Characteristics of integrated operational amplifier circuit 89

3. Composition block diagram of1.2 integrated operational amplifier circuit 89

3.2 Current Source Circuit 90

3.2. 1 basic current source circuit 9 1

*3.2.2 Amplifier with current source as active load 92

3.3 Integrated operational amplifier principle circuit and ideal operational amplifier parameters 92

3.3. 1 principle circuit analysis of integrated operational amplifier 92

3.3.2 Main parameters of integrated operational amplifier 93

3.4 Parameters and Workspace of Ideal Integrated Operational Amplifier 94

3.4. 1 Performance index of ideal operational amplifier 95

3.4.2 Characteristics of Ideal Operational Amplifier in Different Workspaces 95

3.5 Basic Operation Circuit 96

3.5. 1 proportional operation circuit 97

3.5.2 Addition and subtraction circuit 100

3.5.3 Integral and differential operation circuit 103

3.5.4 Logarithmic and Exponential (Logarithmic) Operation Circuit 104

Summary of this chapter 105

Exercise 106

Chapter 4 Sine Wave Oscillating Circuit 1 1 1

4. 1 Overview11/

4.2 Basic principle of sine wave oscillation circuit 1 1 1

4.2. 1 sine wave oscillation circuit11oscillation condition

4.2.2 Basic composition, classification and analysis method of oscillator circuit 1 13

4.3 LC oscillator circuit 1 13

4.3. 1 mutual inductance coupled oscillation circuit 1 14

4.3.2 Three-point oscillation circuit 1 14

4.4 RC oscillator circuit 1 16

4.4. 1 RC phase-shifted oscillator circuit 1 16

4.4.2 Venturi bridge oscillation circuit 1 17

4.5 Clock crystal oscillator circuit 1 18

Summary of this chapter 120

Exercise 12 1

The next digital part

The fifth chapter digital logic foundation 122

A circuit that performs arithmetic and logical operations on digital quantities with digital signals is called a digital circuit or a digital system. Because it has the functions of logical operation and logical processing, it is also called digital logic circuit. Modern digital circuits are composed of several digital integrated devices manufactured by semiconductor technology. Logic gate is the basic unit of digital logic circuit. Memory is a digital circuit for storing binary data. Generally speaking, digital circuits can be divided into combinational logic circuits and sequential logic circuits.

5. 1 digital system and BCD code 122

5. 1. 1 digital system 122

5. 1.2 A few simple codes 125

5.2 Fundamentals of Logic Algebra 126

Logical operation, also known as Boolean operation, uses mathematical methods to study logical problems and successfully establishes logical calculus. He used equality to express his judgment and regarded reasoning as the transformation of equality. The effectiveness of this transformation does not depend on people's interpretation of symbols, but only on the combination law of symbols. This logic theory is usually called Boolean algebra. In 1930s, logic algebra was applied to circuit systems. Subsequently, due to the development of electronic technology and computer, various complex large-scale systems appeared, and their transformation laws also followed the law revealed by Boolean. Logical operators are usually used to test true and false values. The most common logical operation is loop processing, which is used to judge whether to leave the loop or continue to execute the instructions in the loop.

5.2. 1 and operation 126

5.2.2 or operation 127

5.2.3 Non-operation 128

5.2.4 Composite Operation 129

5.2.5 Positive Logic and Negative Logic 130

5.3 Basic relations and common formulas of logical algebra 13 1

5.3. 1 Basic relations of logical algebra 13 1

Basic Law 132

5.3.3 Common formula 133

Basic theory 134

5.4 Representation of Logical Functions 135

5.4. Representation of1logic function 135

5.4.2 Truth Table Representation of Logical Functions 135

5.4.3 Logical function formula 136

Logic diagram 138

5.4.5 working waveform diagram 138

5.5 Simplification of Logic Function Formula 139

5.5. 1 formula simplification method 139

5.5.2 Karnaugh Map Simplification of Logical Functions 140

5.5.3 Simplifying logical functions with irrelevant items 145

5.6 Study two kinds of problems of logic function 146

5.6. 1 given circuit analysis function 146

5.6.2 Design the circuit for the given logic problem 148.

Summary of this chapter 150

Exercise 15 1

Chapter VI Gate Circuit 154

6. 1 Overview 154

Logic gates are the basic components of integrated circuits. Simple logic gates can be composed of transistors. The combination of these transistors can make the high level and low level representing two signals pass through them to generate a high level or low level signal. High and low levels can represent logic "true" and "false" or 1 and 0 in binary respectively, thus realizing logic operation. Common logic gates include AND gate, OR gate, NOT gate, XOR gate (also called XOR) and so on. Logic gates can be combined to achieve more complex logic operations.

6.2 discrete component gate circuit 155

Diode and gate circuit 155

Diode or gate circuit 156

6.2.3 Triode NOT gate circuit 156

6.3 TTL integrated gate circuit 158

6.3. 1 TTL NOT gate 158

6.3.2 TTL NAND gate and NOR gate circuit 16 1

6.3.3 open collector 163

Six, three-state gate 165

6.4 CMOS gate circuit 168

6.4. 1 CMOS inverter circuit composition and working principle 168

6.4.2 Composition and working principle of CMOS NAND gate circuit 169

6.4.3 Composition and working principle of CMOS NOR gate circuit 169

6.4.4 Composition and working principle of CMOS transmission gate 17 1

6.5 Introduction to the knowledge of using integrated circuits 172

6.5. 1 nomenclature of domestic integrated circuits 172

6.5.2 Main technical indexes of integrated gate circuit 172

6.5.3 Handling of Extra Input Pin 173

6.5.4 Interface circuit between TTL and CMOS 173

Summary of this chapter 175

Exercise 175

Chapter VII Combinatorial Logic Circuits 178

7. 1 overview 178

Combinatorial logic circuit means that at any time, the output state only depends on the combination of simultaneous input States, and has nothing to do with the previous state of the circuit and other States. Its logical functions are as follows:

Lie =f(A 1, A2, A3…An)(I = 1, 2,3 … m)

Where A 1~An is the input variable and Li is the output variable.

The characteristics of combinational logic circuits can be summarized as follows:

① There is no feedback delay channel between input and output;

② There are no memory cells in the circuit.

For the first logic expression formula or logic circuit, its truth table may be unique, but its corresponding logic circuit or logic expression may have multiple implementations. Therefore, the truth table corresponding to a specific logic problem is unique, but there are various logic circuits to realize it. In practical design work, if some gate circuits cannot be obtained for some reasons, the circuit can be changed by changing the logic expression, so that other devices can be used to replace the device. At the same time, in order to make the design of logic circuits more concise, it is necessary to simplify logic expressions by various methods. Combinatorial circuits can be described by a set of logical expressions. Designing combinational circuits is to realize logical expressions. It is required to make the circuit simple, economical and reliable on the basis of meeting the logic function and technical requirements. There are various ways to realize the combinational logic function, which can use basic gate circuits or medium and large scale integrated circuits. The general design steps are as follows:

① Analyze the design requirements and list the truth table;

② Make logical and necessary transformation. Get the simplest logical expression needed;

③ Draw a logical diagram.

7. 1. 1 Characteristics of combinational logic circuit5438+078

7. 1.2 Analysis and design method of combinational logic circuit 178

7.2 Common combinational logic circuits 179

7.2. 1 encoder 179

An encoder is a device that compiles signals (such as bit streams) or data and converts them into signal forms that can be used for communication, transmission and storage. The encoder converts angular displacement or linear displacement into electrical signals, the former is called code wheel, and the latter is called code wheel. According to the reading mode, encoders can be divided into contact type and non-contact type; According to the working principle, encoders can be divided into incremental and absolute types. Incremental encoder converts displacement into periodic electrical signal, and then converts this electrical signal into counting pulses, and the number of pulses indicates displacement. Each position of absolute encoder corresponds to a certain digital code, so its indication value is only related to the starting and ending positions of measurement, and has nothing to do with the intermediate process of measurement.

Encoders can be classified in the following ways.

1, according to the different classification of codewheel.

(1) Incremental formula: that is, every unit angle is rotated, a pulse signal is sent (sine and cosine signals are also sent,

Then it is subdivided and chopped into pulses with higher frequency), which are usually output by phase A, phase B and phase Z. Phase A and phase B are pulse outputs with a mutual delay of 1/4 cycles. According to the delay relationship, forward and reverse can be distinguished, and the second or fourth frequency multiplication can be carried out by taking the rising edge and falling edge of phase A and phase B; Z-phase is a single-cycle pulse, that is, one pulse is emitted every cycle.

(2) Absolute value type: corresponding to a circle, each reference angle sends out a unique binary value of the corresponding angle, and multiple positions can be recorded and measured by an external circle recording device.

2. According to the signal output type, it can be divided into voltage output, open collector output, push-pull complementary output and long-line drive output.

3, according to the encoder mechanical installation form classification

(1) axial type: axial type can be divided into clamping flange type, synchronous flange type and servo installation type.

(2) Casing type: Casing type can be divided into half-empty type, full-empty type and large-caliber type.

4. According to the working principle of the encoder, it can be divided into photoelectric type, magnetoelectric type and touch brush type.

7.2.2 Priority encoder 18 1

Decoder 185

Decoder is an important device of combinational logic circuit, which can be divided into variable decoding and display decoding. Variable decoding is generally a device with less input and more output, which is generally divided into 2n decoding and 842 1BCD decoding. Display decoding mainly solves the conversion function of displaying binary numbers to corresponding decimal or hexadecimal numbers. Generally divided into two categories: driving LED and driving LCD.

Decoding is the reverse process of coding. When encoding, each binary code is given a specific meaning, that is, it represents a signal or an object. The process of "translating" the specific meaning of the code state is called decoding, and the circuit that realizes the decoding operation is called decoder. In other words, a decoder is a circuit that can convert the state of an input binary code into an output signal to express its original meaning.

The output signal can be pulse, high level or low level as required.

7.2.4 display decoder 189

7.2.5 data selector 19 1

Adder 195

7.2.7 Numerical comparator 198

7.3 Competitive Adventure in Combinatorial Logic Circuits 199

7.3. 1 Competition-Adventure Phenomenon 199

7.3.2 Judgment Method of Competition-Adventure Phenomenon 200

Abstract of this chapter 20 1

Exercise 202

Chapter 8 Flip-flops and Sequential Logic Circuits 205

8. 1 overview 205

8.2 Circuit structure and working principle of flip-flop 205

Basic RS flip-flop 205

8.2.2 Circuit structure and working principle of synchronous RS flip-flop 208

8.2.3 Circuit structure and working principle of master-slave RS flip-flop 209

8.2.4 Edge trigger composed of CMOS transmission gate 2 13

8.3 Description Method of Logic Function of Trigger 2 14

8.3. 1 RS trigger 2 14

8.3.2 JK trigger 2 15

8.3.3 D trigger 2 16

Trigger 2 16

8.3.5 Logical Function Transformation of Trigger 2 17

8.4 Analysis method and design method of sequential logic circuit 2 19

8.4. 1 synchronous sequential circuit analysis method 2 19

8.4.2 Analysis Methods and Examples of Asynchronous Sequential Logic Circuits 223

8.4.3 Design method of synchronous sequential circuit224

8.5 Common Sequential Logic Circuits 228

8.5. 1 register and shift register 228

8.5.2 Synchronization Counter 23 1

8.5.3 Shift Register Type Counter 244

8.6 Comprehensive example of sequential logic circuit analysis and design 246

Chapter 248 Summary

Exercise 249

Chapter 9 Pulse Generation and Shaping Circuit 253

9. 1 overview 253

9.2 Application of 555 Timer 253

9.2. 1 555 Circuit structure of timer 253

9.2.2 Schmidt trigger 255 consists of 555 timers.

9. 2. 3 555 Timer is used to form monostable circuit 256.

9.2.4 multivibrator 258 consists of a 555 timer.

9.2.5 Application Circuit of 555 Timer 260

9.3 Synchronous crystal multivibrator 262

9.4 Voltage Controlled Oscillator 263

Chapter 264 Summary

Exercise 264

Chapter 10 Digital/Analog and Analog/Digital Converter 266

10. 1 overview 266

10.2 digital-to-analog converter 266

10.2. 1 weighted resistor network DAC 266

10.2.2 Inverted T-shaped resistor network digital-to-analog converter 268

10.3 ADC 269

Basic composition of 10.3. 1 A/D converter 269

10.3.2 Direct ADC 27 1

10.3.3 indirect analog-to-digital converter 275

Parameters of 10.4 A/D and D/A 276.

10.4. 1 A/D and D/A conversion accuracy 276

10.4.2 A/D and D/A conversion speed 277

Chapter 277 Summary

Exercise 277

Chapter 1 1 Semiconductor Memory and Programmable Logic Device 279

1 1. 1 semiconductor memory 279

1 1. 1. 1 ROM 279

The extension and application of11.1.2 rom+0.865438

1 1. 1.3 several commonly used ROM 283

1 1.2 programmable logic device 284

The connection mode of 1 1.2. 1 PLD and the PLD representation of basic gate circuit 285.

1 1.2.2 programmable array logic286

1 1.2.3 Basic structure of programmable generic array logic devices

1 1.2.4 programmable logic device 290 in the system

Programming of Programmable Logic Devices 296

Development system of11.3.1PLD.50000.000000000805

11.3.2 General steps of PLD programming 297

Introduction of 1 1.4 CPLD and FPGA 297

11.4.1CPLD and the basic structure of FPGA, 20000.000000000503

FPGA/CPLD design flow 300

Overview of this chapter 302

Exercise 302

Appendix A Common Digital Integrated Circuit Models and Pins 306