The main contents, characteristics and possible breakthroughs of the work done by the personnel in this direction at present:
Optoelectronic technology is an important development direction of information technology at present, which will bring a new technological revolution in the information field.
Semiconductor optoelectronics is the frontier direction of the mutual penetration and cross-formation of optoelectronic technology and microelectronics technology.
Main contents:
1. Wide-band gap semiconductor optoelectronics Wide-band gap semiconductor is the first choice for developing short-wavelength optoelectronic devices, especially short-wavelength light-emitting devices urgently needed in current applications. Wide-band gap semiconductor optoelectronics is a strategic commanding height and a growing point of disciplines for countries all over the world to compete for development. The technologies of wide-band gap semiconductor optoelectronic materials (GaN-based and ZnO-based), especially multi-quantum well material preparation technology, doping technology, energy band engineering technology and polarization control technology, as well as large-size low dislocation density self-supporting GaN substrate technology, are emphatically studied. Develop ZnO-based laser materials and device technology, and develop ZnO-based blue laser with low threshold current density; Research and development of group III nitride laser materials and device technology, and development of long-life group III nitride blue-violet laser.
2. Silicon-based nano-optoelectronic integration technology aims at developing silicon-based nano-optoelectronic integration technology, systematically studies its key materials (silicon-based luminescent materials), key device structural units (silicon-based nanostructures) and key technologies (especially self-assembly technology), and puts forward new concepts, principles and technologies of functional integration; Design the structural unit of nano-functional materials with quantum size effect, realize information processing function and develop devices by using this effect; On this basis, the functional integration of silicon-based nano-photoelectrons is realized by using a variety of information carriers, complex material structure and high-precision integration technology, combining the basic physical characteristics of materials and the basic functional requirements of devices.
3. Binary micro-optical element technology Design and optimize binary micro-patterns, make micro-optical devices by IC micromachining technology, form a new optical system, make technical preparations for optical processing and transmission, and realize miniaturization, array, integration and economy of traditional optics. Using IC technology to make surface sub-wavelength structures, such as binary lens array, two-dimensional grating, binary optical beam splitter and so on. Carry out research on the correlation between CGH and image distortion, develop CGH scanner, image differential filter and multi-channel spectral analysis filter, and develop lensless correlation recognition system, coherent light recognition system and incoherent light recognition system.
A variety of optical interconnection technologies, including PS optical interconnection, CLOS optical interconnection, butterfly optical interconnection and so on, are deeply studied.
Characteristics of this research direction: This research direction focuses on the key semiconductor optoelectronic materials and device technologies related to optical information storage, display and processing, especially short-wavelength optoelectronic materials and light-emitting devices, silicon-based optoelectronic integration technology and micro-optical device technology.
Possible breakthroughs:
1. Large size self-supporting GaN substrate material with low dislocation density;
2. Long life group III nitride blue-violet laser;
3. ZnO-based blue laser with low threshold current density;
4. Efficient and uniform nanoscale silicon-based luminescent materials;
5. High-performance binary optical lens array, two-dimensional grating and binary optical beam splitter. (2) Research direction-semiconductor heterostructure electronics.
(Name of academic leader: Zheng Youliao, number of professors: 4, number of associate professors: 5, number of doctors: 6).
The main contents, characteristics and possible breakthroughs of the work done by the personnel in this direction at present:
This direction is mainly engaged in the research and development of new semiconductor optoelectronic devices based on semiconductor heterostructure. Semiconductor heterostructure is an important infrastructure of modern high-speed microelectronics and optoelectronics, and it is the core technology in the field of information optoelectronics in the new century. The new semiconductor optoelectronic devices based on semiconductor heterostructure have many important applications in information, communication, automatic control, aerospace, national defense and other fields, which are closely related to the rapid development of high-tech industries in China and Jiangsu Province.
The main research contents in this direction:
1. silicon-based germanium-silicon heterostructure materials and devices. Silicon-based germanium-silicon heterostructure is the key technology to develop silicon-based RF integrated devices and chip systems, and it is also an important way to realize silicon-based optoelectronic integration. This project mainly studies the preparation science and technology of new silicon-based germanium-silicon heterostructure materials by ultra-low pressure chemical vapor deposition (VLP-CVD), and designs and develops new germanium-silicon heterostructure photoelectric devices, including silicon-based germanium-silicon (carbon) heterojunction bipolar transistors, infrared detectors and quantum structure light-emitting devices.
2. Wide bandgap semiconductor materials and devices. Wide band gap semiconductor materials and devices play an important role in optical storage, optical display, ultraviolet detection and high temperature/high power microwave electronics technology, and are the focus of international research. This project mainly studies the science and technology of group III nitride metal organic chemical vapor deposition (MOCVD) material growth and device preparation, including the preparation of heterostructure and quantum well materials of short-wavelength semiconductor lasers and high-power microwave electronic devices, the design and development of group III nitride high-temperature high-power microwave devices, ultraviolet photodetectors and other microelectronic and photoelectric devices.
Main features:
(1) With the main goal of developing silicon-based RF integration and photoelectric subset, we design and tailor the photoelectric physical properties of materials through silicon band engineering, and develop new structural materials and devices with new functions.
(2) Developing piezoelectric modulation energy band engineering of group III nitride and developing new group III nitride microwave power devices;
(3) Combining the structural and physical advantages of group III nitride, ZnO and SiC wide band gap semiconductors, the hybrid wide band gap semiconductor heterostructure materials and devices are developed.
Possible breakthroughs:
(1) high-quality silicon-based germanium-silicon-carbon heterostructure materials and high-performance silicon-based germanium-silicon-carbon infrared detectors;
(2) High-performance group III nitride high-temperature and high-power microwave electronic devices urgently needed in national defense, aerospace and other industries;
(3) High performance group III nitride ultraviolet photoelectric detector. (Name of academic leader: Chen Kunji, number of professors: 4, number of associate professors: 4, number of doctors: 5) The main contents, characteristics and possible breakthroughs of the work done by our staff at present: With the rapid development of information technology, the scale of semiconductor devices is developing from sub-micron to nano, and the nano-quantum system from three-dimensional to low-dimensional is undergoing profound changes. The research connotation of traditional microelectronics is extending to nano-electronics. The research focus of this direction is to develop the preparation technology of semiconductor nanostructures with independent innovation intellectual property rights, and to explore and study the new structure, new principle and device characteristics of semiconductor nano-electronic devices. At the same time, it is closely integrated with the microelectronics industry in Jiangsu Province and develops together, contributing to the status of Jiangsu Province in the field of nano-electronics and nano-optoelectronics. Main contents:
1. semiconductor nano-quantum structure materials and nano-silicon and germanium-silicon materials with orderly, controllable and high-density physical properties are prepared by self-assembly techniques such as laser-induced limited crystallization principle in multilayer film structures. Study the interfacial properties of nanoparticles and explore the low-temperature ultra-thin oxidation technology for passivation interface defects; The ideal semiconductor colloidal quantum dots and heterogeneous quantum well quantum dot structures were prepared by chemical synthesis, and the electron row state, nano-switching effect and electron and photon modulation effect in the new low-dimensional structure were studied experimentally.
2. Nano-electronic devices and nano-information technology combine microelectronics technology with nano-processing technology to manufacture and develop ultra-low power consumption, ultra-high density and ultra-high frequency nano-devices suitable for future information processing technology, including single-electron charged state logic and storage structure, tunneling transistors, and study the structure and working mode of integrated devices; The physical and technical problems of reducing the size of MOSFET devices are studied, including reliability and dielectric materials. Quantum and classical electronic states in semiconductor nanostructures and their applications in new devices are studied.
3. Nano-electronics information processing is based on nano-electronics, which studies the working principle of nano-scale electronic devices and the corresponding models, simulations and analytical detection methods. Based on the electron transport theory of nano-electronic system, the model and simulation method of interconnection and signal transmission between ultra-high density integrated nano-devices are studied. Based on neural network calculation and quantum calculation, the signal processing method of ultra-high density integrated single electron device is studied.
Characteristics of this research direction:
1. actively use the methods and achievements of microelectronics technology to explore and develop nano devices with new integrated structures and new working modes compatible with IC. In particular, silicon-based nano-devices with distinct characteristics in principle, preliminary progress and integration prospects are selected as the focus of in-depth research. In this direction, China started the research on silicon-based nano-materials and devices earlier, and made important progress.
2. Make full use of the characteristics of nano-materials, combine the original working basis and new methods, and develop nano-quantum structure materials with simple process, compatibility with microelectronics, excellent performance and independent intellectual property rights.
Possible breakthroughs:
1. Preparation of controllable nano-structured thin film materials for semiconductor photoelectric nano-devices;
2. Develop nano memory devices with ultra-low power consumption;
3. High performance nano-silicon heterojunction transistor;
4. Theoretical calculation of nano-functional materials, structures and device characteristics, corresponding physical models and simulation methods. (Name of academic leader: Lu Huaixian, number of professors: 2, number of associate professors: 6, number of doctors: 2)
The main contents, characteristics and possible breakthroughs of the work done by the personnel in this direction at present:
Solid-state electronic application technology is a direct application-oriented solid-state electronic technology, which is a bridge connecting contemporary microelectronics with solid-state electronics and frontier application fields, and is closely related to national economy and national defense construction.
The main research contents include:
1. semiconductor electronic material technology studies new growth methods of microelectronics and solid electronic materials, and develops new material growth systems and related control technologies. The new atomic epitaxy method and system of rapid heating ultra-low pressure chemical vapor deposition, which is innovative and developed by this discipline, is unique at home and abroad and has intellectual property rights. The method and system are used to develop low-temperature epitaxial silicon materials for silicon microwave power devices urgently needed by national defense. High-energy electron beams are used to irradiate semiconductor materials and devices, so as to realize the modification of semiconductor materials and devices, develop new materials and improve the performance of devices. The electron irradiation technology of semiconductor materials and devices in this discipline is leading in China, and the developed electron irradiation silicon switching diode technology has been successfully transformed in enterprises, creating direct economic and social benefits.
2。 Intelligent electronic technology and system apply intelligent technology to a variety of detection fields, focusing on the design and development of virtual instruments and control software, and strengthening the technical application of microprocessors and single-chip computers, especially in biomedical fields such as gene diagnosis and identification; Based on modern electronic control technology, new solid-state devices and computer technology, explore and realize a new generation of electronic monitoring system; In the actual system design, the signal processing technology, graphic image processing technology and signal transmission technology are comprehensively studied and applied.
3。 New special electronic devices and technologies develop magnetoresistance materials with high magnetic field sensitivity and electronic devices with strong magnetoresistance effect, and develop solid-state magnetron switches with microsecond switching speed and solid-state current relays with current sensitivity better than 150 mA; Advanced pulse magnetization technology has been developed, and MC-C pulse magnetizer products occupy a large market share in China.
4。 Room temperature magnetic refrigeration materials and system technology research and development of new magnetic refrigeration working medium, room temperature magnetic refrigeration refrigerator and other refrigeration systems. This research is currently leading in China.
Research features:
(1) The rapid heating technology was successfully introduced into the field of microelectronic and solid electronic thin film material growth, and the atomic-level epitaxy was realized.
(2) Directly facing the application fields and users, research and develop new technologies and new products that users actually need, and the research and development expenditure exceeds 6.5438+0.2 million yuan.
Possible major breakthroughs:
(1) Breakthrough and industrialization of broadband lightweight composite electromagnetic wave absorbing materials;
(2) Intelligent identification of genetic information;
(3) Efficient room temperature magnetic refrigeration refrigerator.