Principle of IGBT tube
IGBT tube is a combination of MOS tube (field effect tube) and bipolar Darlington tube.

Ordinary field effect transistors can only work under weak driving voltage, but it is difficult to work in high voltage and high current state for a long time because of its large internal resistance and fast heating.

Although high-power Darlington tube can work for a long time under high voltage and high current, it needs a large driving current.

FET is used as push tube, and high-power Darlington tube is used as output tube. In this way, the advantages of the two are organically combined into the current IGBT tube, and the power is above1000 W.

IGBT tubes are: P-type, N-type, damped and undamped.

The pins of ordinary IGBT tubes are arranged with the pins facing down, and the standard model faces itself. From left to right, there are 1 pins: gate (g), 2 pins: collector (c) and 3 pins: emitter (e).

Before measurement, short-circuit (discharge) the three pins, and measure the positive and negative resistance values of Gc and ge with pointer instrument 1K, with the red pen connected to the C pole and the black pen connected to the E pole. If the measured value is about 3.5K, the tube contains a damping diode, and if the measured value is about 50K, there is no damping.

If the resistance between the three pins is small or infinite, the electron tube is damaged.

IGBT tubes are often used in induction cookers. Look for a circuit diagram of an induction cooker. The application of common field effect transistors is similar.